Misfit dislocation generation in InGaN epilayers on free-standing GaN

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 20-23, 2006, Pages

  Liu, Rong ^a   Mei, Jin ^a   Srinivasan, Sridhar ^a   Omiya, Hiromasa ^a   Ponce, Fernando A ^a   Cherns, David ^b   Narukawa, Yukio ^c   Mukai, Takashi ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

^c NICHIA CORPORATION   (Japan)

Author keywords

Epitaxy on bulk GaN; InGaN epilayers; Misfit dislocations; Plastic relaxation; Punch out relaxation process

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; RELAXATION PROCESSES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXY ON BULK GAN; INGAN EPILAYERS; PLASTIC RELAXATION; PUNCH-OUT RELAXATION PROCESS;

HETEROJUNCTIONS;

EID: 33745316996     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L549     Document Type: Article

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