Role of trimethylboron to silane ratio on the properties of p-type nanocrystalline silicon thin film deposited by radio frequency plasma enhanced chemical vapour deposition

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 4, 2010, Pages 2547-2551

  Aguas H ^a,b   Filonovich, S A ^a   Bernacka Wojcik, I ^b   Fortunato, E ^a   Martins, R ^a,b  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PRESSURES; DIBORANE; ELECTRICAL MEASUREMENT; GAS SOURCES; GROWTH MECHANISMS; HYDROGEN DILUTION; HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE; NANO-CRYSTALLINE SILICON THIN FILMS; P-TYPE; P-TYPE SILICON; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; RADIO FREQUENCY PLASMA; RF-PECVD; STRUCTURAL AND ELECTRICAL PROPERTIES; SUBSURFACE LAYER; TRIMETHYLBORON;

DEPOSITION; ELECTRIC PROPERTIES; METHANE; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SPECTROSCOPIC ELLIPSOMETRY;

NANOCRYSTALLINE SILICON;

EID: 77954980837     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1434     Document Type: Conference Paper

References (22)

1. J. K. Rath and R. E. I. Schropp, Sol. Energy Mater. Sol. Cells 53, 189 (1998).
2. Z. H. Hu, X. B. Liao, H. W. Diao, Y. Cai, S. B. Zhang, E. Fortunato, and R. Martins, J. Non-Cryst. Solids 352, 1900 (2006).
3. S. A. Filonovich, P. Alpuim, L. Rebouta, J.-E. Bouree, and Y. M. Soro, J. Non-Cryst. Solids 354, 2376 (2008).
4. T. Matsui, M. Kondo, and A. Matsuda, J. Non-Cryst. Solids 338-340, 646 (2004).
5. H. J. Lee, A. Sazonov, and A. Nathan, Mater. Res. Soc. Symp. Proc. (2007), Vol. 989, p. 503.
6. P. Roca i Cabarrocas, S. Kumar, and B. Drévillon, J. Appl. Phys. 66, 3286 (1989).
7. A. Lloret, Z. Y. Wu, M. L. Theye, I. El Zawawi, J. M. Siefert, and B. Equer, Appl. Phys. A 55, 573 (1992).
8. W. R. Blanchard, R. C. Gernhardt, H. W. Kugel, and P. H. Lamarche, 19th IEEE/NPSS Symposium On Fusion Engineering, Proceedings (2002), p. 226.
9. M. Kondo, Y. Nasuno, H. Mase, T. Wada, and A. Matsuda, J. Non-Cryst. Solids 299-302, 108 (2002).
10. E. Eser, S. S. Hegedus, and W. A. Buchanan, NCPV Proceedings of the I5th Conference, AIP Conference Proceedings (1999), Vol. 462, p. 254.
11. S. Hamma, D. Colliquet, and P. Roca i Cabarrocas, MRS Symp. Proc. (1998), Vol. 507, p. 505.
12. G. E. Jellison and M. F. Modine, Appl. Phys. Rev. Letts. 69, 317 (1996).
13. H. Aguas, V. Silva, E. Fortunato, S. Lebib, P. Roca, I. Cabarrocas, I. Ferreira, L. Guimarães, and R. Martins, Jpn. J. Appl. Phys. 42, 4935 (2003).
14. T. Kaneko, M. Wakagi, K. Onisawa, and T. Minemura, Appl. Phys. Lett. 64, 1865 (1994).
15. H. Águas, V. Silva, I. Ferreira, E. Fortunato, and R. Martins, Phil. Mag. B 80, 475 (2000).
16. Y. He, C. Yin, G. Cheng, L. Wang, X. Liu, and G. Y. Hu, J. Appl. Phys. 75, 797 (1994).
17. P. Brogueira, J. P. Conde, S. Arekat, and V. Chu, J. Appl. Phys. 79, 8748 (1996).
18. M. Ledinský, L. Fekete, J. Stuchlík, T. Mates, A. Fejfar, and J. Kočka, J. Non-Cryst. Solids 352, 1209 (2006).
19. P. Roca i Cabarrocas, A. Fontcuberta i Morral, S. Lebib, and Y. Poissant, Pure Appl. Chem. 74, 359 (2002).
20. M. Otobe and S. Oda, Jpn. J. Appl. Phys. 31, L-1388 (1992).
21. S. Yamasaki, U. K. Das, and T. Yasuda, J. Non Cryst. Solids 299-302, 185 (2002).
22. P. Roca i Cabarrocas, A. Fontcuberta i Morral, B. Kalache, and S. Kasouit, Solid State Phenomena 93, 257 (2003).