Orientational relationships and atomic arrangements of GaN nanorods grown on Al 2O 3 (0001) substrates by using hydride vapor phase epitaxy

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 5, 2010, Pages 3435-3439

  Lee, K H ^a   Lee, J Y ^a   Kwon, Y H ^b   Ryu, S Y ^b   Kang, T W ^b   Yoo, C H ^c   Kim, T W ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Dongguk University   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

Atomic arrangements; GaN nanorods; Hydride vapor phase epitaxy; Oritentational relationships

Indexed keywords

ATOMIC ARRANGEMENT; GAN NANORODS; HIGH-RESOLUTION TEM; HYDRIDE VAPOR PHASE EPITAXY; INTERFACIAL REGION; ORIENTATIONAL RELATIONSHIP; PREFERENTIAL ORIENTATION; SCANNING ELECTRON MICROSCOPY IMAGE; SELECTED AREA ELECTRON DIFFRACTION; SOURCE MATERIAL; TEM; WURZITE;

ALUMINUM; ATOMS; CRYSTAL GROWTH; GALLIUM ALLOYS; NANORODS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM NITRIDE;

EID: 77954962058     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2327     Document Type: Conference Paper

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