Dislocations and triangular defect in low-temperature halo-carbon epitaxial growth and selective epitaxial growth

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 121-124

  Das, Hrishikesh ^a   Melnychuk, Galyna ^a   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Chloromethane; Dislocations; Etch pits; Halo carbon; HCl; KOH; Low temperature epitaxial growth; Selective epitaxial growth; Triangular defects

Indexed keywords

CARBON; CHLORINE COMPOUNDS; DEFECTS; DISLOCATIONS (CRYSTALS); EPILAYERS; POTASSIUM HYDROXIDE; SILICON CARBIDE; SUBSTRATES; TEMPERATURE;

CHLOROMETHANE; ETCH PITS; LOW TEMPERATURE EPITAXIAL GROWTH; SELECTIVE EPITAXIAL GROWTH; TRIANGULAR DEFECTS;

EPITAXIAL GROWTH;

EID: 77954782470     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.121     Document Type: Conference Paper

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