Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 19, Issue 4, 2001, Pages 1562-1565

  Roh, K ^a   Youn, S ^a   Yang, S ^a   Roh, Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

WSi2

Indexed keywords

EID: 23044526172     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.1345914     Document Type: Conference Paper

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