Influence of Si content on the phase formation of W1-xSi x (0.30 ≤ x ≤ 0.74) gate electrodes and their work function

Electrochemical and Solid-State Letters

Volumn 11, Issue 11, 2008, Pages

  Lin, C M ^a   Chen, J S ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

TUNGSTEN;

PHASE FORMATIONS; SI CONTENT; TUNGSTEN SILICIDE;

SILICON;

EID: 51849099562     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2976794     Document Type: Article

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