MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 263-267

  Gassilloud, R ^a   Martin, F ^a   Leroux, C ^a   Hopstaken, M ^a   Garros, X ^a   Casse M ^a   Reimbold, Gilles ^a   Billon, Thierry ^a   Bensahel, Daniel ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

High k; NMOS transistors; Organo metallic chemical vapor deposition MOCVD; Tungsten silicide

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRODEPOSITION; ELECTRON MOBILITY; FLUORINE; METALS; MOSFET DEVICES; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON COMPOUNDS; SILICON WAFERS; TRANSISTORS; TUNGSTEN; VAPORS;

12 IN. WAFERS; ELECTRICAL PROPERTIES; EQUIVALENT-OXIDE THICKNESS; FLUORINE-FREE; GATE FIRSTS; HIGH - K DIELECTRICS; HIGH THERMALS; HIGH-K; METAL GATE ELECTRODES; METAL GATES; NMOS TRANSISTORS; ORGANO-METALLIC CHEMICAL VAPOR DEPOSITION MOCVD; TUNGSTEN SILICIDE; ULTRA-THIN BODIES; WORK-FUNCTION;

CHEMICAL VAPOR DEPOSITION;

EID: 59049104489     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.010     Document Type: Article

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