Accurate simulation of temperature-dependent dark current in hgcdte infrared detectors assisted by analytical modeling

Journal of Electronic Materials

Volumn 39, Issue 7, 2010, Pages 981-985

  Hu, Weida ^a   Chen, Xiaoshuang ^a   Ye, Zhenhua ^a   Zhang, Jing ^b   Yin, Fei ^a   Lin, Chun ^a   Li, Zhifeng ^a   Lu, Wei ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

Carrier transport; Dark current; HgCdTe infrared detector; Modeling; Numerical simulation; Tunneling

Indexed keywords

ANALYTICAL MODELING; BAND TO BAND TUNNELING; CONTINUITY EQUATIONS; EFFICIENT METHOD; EXPERIMENTAL DATA; GENERATION-RECOMBINATION PROCESS; HGCDTE; HGCDTE INFRARED DETECTOR; INFRARED PHOTODIODE; NONLINEAR FITTING; NUMERICAL SIMULATION; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; VOLTAGE CURVE;

CARRIER TRANSPORT; DARK CURRENTS; DETECTORS; INFRARED DETECTORS; MATHEMATICAL MODELS; MERCURY (METAL); MERCURY COMPOUNDS; TELLURIUM COMPOUNDS; TUNNELING (EXCAVATION);

COMPUTER SIMULATION;

EID: 77954623566     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1121-8     Document Type: Conference Paper

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