Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 7, 2001, Pages 1326-1332

  Wenus, J ^a   Rutkowski, J ^a   Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Heterojunction; HgCdTe photodiodes; Homojunction; Quantum efficiency; R0 A product

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; MERCURY COMPOUNDS; PHOTOCURRENTS; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING;

HETEROJUNCTION PHOTODIODES;

PHOTODIODES;

EID: 0035396892     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.930647     Document Type: Article

References (12)

1. Photovoltaic detectors in HgCdTe
2. Growth and characterization of P-on-n HgCdTe liquid-phase epitaxy heterojunction material for 11-18 μm applications
3. HgCdTe heterojunctions
4. Potential barriers in HgCdTe heterojunctions
5. x Te heterojunctions
6. Numerical simulations for HgCdTe related detectors
7. Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n, heterojunction photodiodes
8. Characterization of HgCdTe P-o-n heterojunction photodiodes and their defects using variable-area test structures
9. Advances in composition control for 16 μm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60 K