|
Volumn 29, Issue 6, 2000, Pages 832-836
|
Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CHARGE;
ELECTRIC POTENTIAL;
ELECTRIC RESISTANCE;
ION IMPLANTATION;
LEAKAGE CURRENTS;
MERCURY COMPOUNDS;
PASSIVATION;
SEMICONDUCTOR DIODES;
ZINC SULFIDE;
GATE CONTROLLED DIODES;
MERCURY CADMIUM TELLURIDE;
SEMICONDUCTING CADMIUM TELLURIDE;
|
EID: 0033721521
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-000-0233-y Document Type: Article |
Times cited : (14)
|
References (15)
|