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Volumn 29, Issue 6, 2000, Pages 832-836

Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ION IMPLANTATION; LEAKAGE CURRENTS; MERCURY COMPOUNDS; PASSIVATION; SEMICONDUCTOR DIODES; ZINC SULFIDE;

EID: 0033721521     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0233-y     Document Type: Article
Times cited : (14)

References (15)
  • 12
    • 0343623113 scopus 로고
    • Lattice Press
    • S. Wolf, Silicon Processing, vol. 3 (Lattice Press, 1995), p. 112.
    • (1995) Silicon Processing , vol.3 , pp. 112
    • Wolf, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.