Analysis of the band offsets between ultrathin GaN(0001̄) layers and sapphire (0001) by photoelectron spectroscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 2, 2010, Pages 268-271

  Hamsen, C ^a   Lorenz, P ^a   Schaefer, J A ^a   Krischok, S ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; BANDBENDING; C-PLANE SAPPHIRE; ELECTRONIC INTERFACE; GAN LAYERS; GAN-SAPPHIRE; IN-SITU; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ULTRA-THIN; ULTRATHIN LAYERS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTAL GROWTH; GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSCIENCE; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SAPPHIRE;

GALLIUM ALLOYS;

EID: 77954342934     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982443     Document Type: Conference Paper

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