Electronic structure of gan(0001)-2 × 2 thin films grown by PAMBE

Physica Status Solidi - Rapid Research Letters

Volumn 2, Issue 5, 2008, Pages 212-214

  Gutt, R ^a   Lorenz, P ^a   Tonisch, K ^a   Himmerlich, M ^a   Schaefer, J A ^a   Krischok, S ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; FUNDAMENTAL BAND GAP; GALLIUM NITRIDE THIN FILM; GAN FILM; HIGHLY SENSITIVE; IN-SITU; NITROGEN PLASMAS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SURFACE PREPARATION METHODS; SURFACE STATE;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTAL GROWTH; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOELECTRON SPECTROSCOPY; POWER SUPPLY CIRCUITS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SILICON CARBIDE; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 68249160484     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802146     Document Type: Article

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