Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1238-1242

  Mendez Garcia V H ^a   Zamora, L ^a   Lastras Martinez, A ^a   Saucedo, N ^a   Pena R ^b   Guillen A ^b   Rivera, Z ^b   Melendez M ^b   Lopez M ^b   Hernandez F ^b,c   Huerta, J ^b,c  

^a UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c CENTRO NACIONAL DE METROLOGÍA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON GAS; ELECTRON MOBILITY; ELECTRON TRANSITIONS; EXCITONS; IMPURITIES; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

PHOTOREFLECTANCE SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0035998563     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1459460     Document Type: Conference Paper

References (16)