SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 12, Issue 7, 2009, Pages

Device characteristics of amorphous indium gallium zinc oxide tfts sputter deposited with different substrate biases

(3) Kwon, Seyeoul a Park, Jungwon a Rack, Philip D a

a University of Tennessee (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; DEVICE CHARACTERISTICS; DIFFERENT SUBSTRATES; ENERGETIC ION; FIELD-EFFECT MOBILITIES; INDIUM GALLIUM ZINC OXIDES; NEGATIVE GATE; OFF-STATE CURRENT; RADIO FREQUENCIES; SUBSTRATE BIAS; SUBTHRESHOLD;

AMORPHOUS FILMS; ELECTRIC POTENTIAL; INDIUM; ION BOMBARDMENT; SUBSTRATES; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 69149102625 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3129505 Document Type: Article

Times cited : (12)

References (16)

1
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 0028-0836, 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 33748795083
- 4 channel fabricated by room temperature rf-magnetron sputtering
- DOI 10.1063/1.2353811
- H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Numura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 0003-6951, 89, 112123 (2006). 10.1063/1.2353811 (Pubitemid 44403788)
- (2006) Applied Physics Letters , vol.89 , Issue.11 , pp. 112123
- Yabuta, H.¹ Sano, M.² Abe, K.³ Aiba, T.⁴ Den, T.⁵ Kumomi, H.⁶ Nomura, K.⁷ Kamiya, T.⁸ Hosono, H.⁹

3
- 42649117785
- 0022-3093,. 10.1016/j.jnoncrysol.2007.10.105
- H. Q. Chiang, B. R. McFarlane, D. Hong, R. E. Presley, and J. F. Wager, J. Non-Cryst. Solids 0022-3093, 354, 2826 (2008). 10.1016/j.jnoncrysol.2007.10. 105
- (2008) J. Non-Cryst. Solids , vol.354 , pp. 2826
- Chiang, H.Q.¹ McFarlane, B.R.² Hong, D.³ Presley, R.E.⁴ Wager, J.F.⁵

4
- 34548684568
- High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
- DOI 10.1063/1.2783961
- J. K. Jeong, J. H. Jeong, H. W. Yang, J. S. Park, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951, 91, 113505 (2007). 10.1063/1.2783961 (Pubitemid 47416041)
- (2007) Applied Physics Letters , vol.91 , Issue.11 , pp. 113505
- Jeong, J.K.¹ Jeong, J.H.² Yang, H.W.³ Park, J.-S.⁴ Mo, Y.-G.⁵ Kim, H.D.⁶

5
- 42349089548
- Origin of subthreshold swing improvement in amorphous indium gallium zinc oxide transistors
- DOI 10.1149/1.2903209
- J. H. Jeong, H. W. Yang, J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, J. W. Song, and C. S. Hwang, Electrochem. Solid-State Lett. 1099-0062, 11, H157 (2008). 10.1149/1.2903209 (Pubitemid 351555816)
- (2008) Electrochemical and Solid-State Letters , vol.11 , Issue.6
- Jeong, J.H.¹ Yang, H.W.² Park, J.-S.³ Jeong, J.K.⁴ Mo, Y.-G.⁵ Kim, H.D.⁶ Song, J.⁷ Hwang, C.S.⁸

6
- 44649153699
- Stable room temperature deposited amorphous InGaZn O4 thin film transistors
- DOI 10.1116/1.2917075
- W. Lim, S. -H. Kim, Yu. -L. Wang, J. W. Lee, D. P. Norton, F. Ren, I. I. Kravchenko, and S. J. Pearton, J. Vac. Sci. Technol. B 1071-1023, 26, 959 (2008). 10.1116/1.2917075 (Pubitemid 351776798)
- (2008) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.26 , Issue.3 , pp. 959-962
- Lim, W.¹ Kim, S.-H.² Wang, Y.-L.³ Lee, J.W.⁴ Norton, D.P.⁵ Pearton, S.J.⁶ Ren, F.⁷ Kravchenko, I.I.⁸

7
- 28344440590
- 0003-6951,. 10.1063/1.2061860
- S. I. Jun, P. D. Rack, T. E. McKnight, A. V. Melechko, and M. L. Simpson, Appl. Phys. Lett. 0003-6951, 87, 132108 (2005). 10.1063/1.2061860
- (2005) Appl. Phys. Lett. , vol.87 , pp. 132108
- Jun, S.I.¹ Rack, P.D.² McKnight, T.E.³ Melechko, A.V.⁴ Simpson, M.L.⁵

8
- 20444436339
- Electrical and microstructural characterization of molybdenum tungsten electrodes using a combinatorial thin film sputtering technique
- DOI 10.1063/1.1855395, 054906
- S. I. Jun, P. D. Rack, T. E. McKnight, A. V. Melechko, and M. L. Simpson, J. Appl. Phys. 0021-8979, 97, 054906 (2005). 10.1063/1.1855395 (Pubitemid 40818273)
- (2005) Journal of Applied Physics , vol.97 , Issue.5 , pp. 1-6
- Jun, S.-I.¹ Rack, P.D.² McKnight, T.E.³ Melechko, A.V.⁴ Simpson, M.L.⁵

9
- 36048966380
- Controlling thin film structure for the dewetting of catalyst nanoparticle arrays for subsequent carbon nanofiber growth
- DOI 10.1088/0957-4484/18/46/465304, PII S0957448407579730
- S. J. Randolph, J. D. Fowlkes, A. V. Melechko, K. L. Klein, H. M. Meyer III, M. L. Simpson, and P. D. Rack, Nanotechnology 0957-4484, 18, 465304 (2007). 10.1088/0957-4484/18/46/465304 (Pubitemid 350093233)
- (2007) Nanotechnology , vol.18 , Issue.46 , pp. 465304
- Randolph, S.J.¹ Fowlkes, J.D.² Melechko, A.V.³ Klein, K.L.⁴ Meyer III, H.M.⁵ Simpson, M.L.⁶ Rack, P.D.⁷

10
- 13844298166
- A statistical parameter study of indium tin oxide thin films deposited by radio-frequency sputtering
- DOI 10.1016/j.tsf.2004.09.011, PII S0040609004013318
- S. -I. Jun, T. E. McKnight, M. L. Simpson, and P. D. Rack, Thin Solid Films 0040-6090, 476, 59 (2005). 10.1016/j.tsf.2004.09.011 (Pubitemid 40245043)
- (2005) Thin Solid Films , vol.476 , Issue.1 , pp. 59-64
- Jun, S.-I.¹ McKnight, T.E.² Simpson, M.L.³ Rack, P.D.⁴

11
- 0016909634
- 0022-5355,. 10.1116/1.569109
- J. J. Cuomo and R. J. Gambio, J. Vac. Sci. Technol. 0022-5355, 14, 152 (1977). 10.1116/1.569109
- (1977) J. Vac. Sci. Technol. , vol.14 , pp. 152
- Cuomo, J.J.¹ Gambio, R.J.²

12
- 34547365696
- Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
- DOI 10.1063/1.2753107
- J. -S. Park, J. K. Jeong, Y. -G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951, 90, 262106 (2007). 10.1063/1.2753107 (Pubitemid 47141109)
- (2007) Applied Physics Letters , vol.90 , Issue.26 , pp. 262106
- Park, J.-S.¹ Jeong, J.K.² Mo, Y.-G.³ Kim, H.D.⁴ Kim, S.-I.⁵

13
- 0022028441
- 0168-583X,. 10.1016/0168-583X(85)90489-6
- J. M. E. Harper, J. J. Cuomo, and R. J. Gambino, Nucl. Instrum. Methods Phys. Res. B 0168-583X, 7-8, 886 (1985). 10.1016/0168-583X(85)90489-6
- (1985) Nucl. Instrum. Methods Phys. Res. B , vol.78 , pp. 886
- Harper, J.M.E.¹ Cuomo, J.J.² Gambino, R.J.³

14
- 38349125119
- 1099-0062,. 10.1149/1.2826332
- H. J. Chung, J. H. Han, T. K. Ahn, H. J. Lee, M. K. Kim, K. G. Jun, J. S. Park, J. K. Jeong, Y. G. Mo, and H. D. Kim, Electrochem. Solid-State Lett. 1099-0062, 11, H51 (2008). 10.1149/1.2826332
- (2008) Electrochem. Solid-State Lett. , vol.11 , pp. 51
- Chung, H.J.¹ Han, J.H.² Ahn, T.K.³ Lee, H.J.⁴ Kim, M.K.⁵ Jun, K.G.⁶ Park, J.S.⁷ Jeong, J.K.⁸ Mo, Y.G.⁹ Kim, H.D.¹⁰

15
- 34248399209
- Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
- DOI 10.1063/1.2723543
- D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, and J. Chung, Appl. Phys. Lett. 0003-6951, 90, 192101 (2007). 10.1063/1.2723543 (Pubitemid 46738090)
- (2007) Applied Physics Letters , vol.90 , Issue.19 , pp. 192101
- Kang, D.¹ Lim, H.² Kim, C.³ Song, I.⁴ Park, J.⁵ Park, Y.⁶ Chung, J.⁷

16
- 52949097961
- 0003-6951,. 10.1063/1.2990657
- J. K. Jeong, H. W. Yang, J. H. Jeong, Y. -G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951, 93, 123508 (2008). 10.1063/1.2990657
- (2008) Appl. Phys. Lett. , vol.93 , pp. 123508
- Jeong, J.K.¹ Yang, H.W.² Jeong, J.H.³ Mo, Y.-G.⁴ Kim, H.D.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.