Nitrides optoelectronic devices grown by molecular beam epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 221-226

  Kauer, M ^a   Bousquet, V ^a   Hooper, S E ^a   Barnes, J M ^a   Windle, J ^a   Tan, W S ^a   Heffernan, J ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE; ROOM TEMPERATURE; THRESHOLD CURRENT DENSITY;

ENERGY DISSIPATION; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

OPTOELECTRONIC DEVICES;

EID: 33846431252     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673518     Document Type: Conference Paper

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