Anion selective potentiometric sensor based on gallium nitride crystalline membrane

Electroanalysis

Volumn 17, Issue 5-6, 2005, Pages 527-531

  Alifragis, Yiannis ^a,b   Konstantinidis, Giorgos ^b   Georgakilas, Alexander ^a,b   Chaniotakis, Nikos ^a  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

Anion selective potentiometric sensor (Cl ; ClO4 ); Gallium nitride on sapphire; HPO4 2; pH sensitivity; Potassium selective

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; ION SELECTIVE ELECTRODES; NEGATIVE IONS; PH EFFECTS; PH SENSORS; POTENTIOMETERS (ELECTRIC MEASURING INSTRUMENTS); WIDE BAND GAP SEMICONDUCTORS;

ANION SELECTIVE POTENTIOMETRIC SENSOR (CL-; CLO4-); DIRECT INTERACTIONS; GALLIUM NITRIDE ON SAPPHIRE; HPO4 -2; HYDROXIDE IONS; ION-SELECTIVE ELECTRODE; PH-SENSITIVITY; POTASSIUM SELECTIVE; SENSOR ELEMENTS;

SAPPHIRE;

EID: 20444453379     PISSN: 10400397     EISSN: None     Source Type: Journal    
DOI: 10.1002/elan.200403191     Document Type: Article

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