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Volumn 106, Issue 12, 2009, Pages

Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure

(11) Rebohle, L a Lehmann, J a Prucnal, S a Nazarov, A a,b Tyagulskii, I a,b Tyagulskii, S a,b Kanjilal, A a Voelskow, M a Grambole, D a Skorupa, W a Helm, M a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT; DECAY TIME; ELECTRICAL PROPERTY; EXCITATION MECHANISMS; GATE OXIDE LAYERS; INTERFACE REGIONS; LIFE-TIMES; LIGHT EMITTERS; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR STRUCTURES; MICRO-STRUCTURAL; NUCLEAR REACTION ANALYSIS; ORDERS OF MAGNITUDE; OXIDE CLUSTERS; OXIDE LAYER; QUALITATIVE MODEL;

DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; EUROPIUM; LIGHT; LIGHT EMISSION; MOS DEVICES; NUCLEAR REACTORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 73849092406 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3272781 Document Type: Article

Times cited : (18)

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