Electroluminescence, charge trapping and quenching in Eu implantes SiO2-Si structures

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1954-1956

  Tyagulskiy, S ^a   Tyagulskyy, I ^a   Nazarov, A ^a   Lysenko, V ^a   Rebohle, L ^b   Lehmann, J ^b   Skorupa, W ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Electroluminescence; Europium; Silicon dioxide

Indexed keywords

ELECTROLUMINESCENCE SPECTRUM; FLASH LAMP ANNEALING; HIGH EFFICIENCY; HIGH TEMPERATURE FURNACES; LIFE-TIME; LIGHT EMITTING DEVICES; METAL-OXIDE; SILICON DIOXIDE;

CHARGE TRAPPING; EUROPIUM; GERMANIUM; LIGHT; LIGHT EMISSION; QUENCHING; SILICA; SILICON OXIDES;

ELECTROLUMINESCENCE;

EID: 67349243628     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.034     Document Type: Article

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