Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

Journal of Luminescence

Volumn 121, Issue 2 SPEC. ISS., 2006, Pages 213-216

  Nazarov, A ^a,c   Osiyuk, I ^a,c   Tyagulskii, I ^a   Lysenko, V ^a   Prucnal, S ^b   Sun, J ^c   Skorupa, W ^c   Yankov, R A ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b MARIA CURIE SK ODOWSKA UNIVERSITY   (Poland)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Charge trapping; Electroluminescence; Rare earth implanted oxide

Indexed keywords

ELECTROLUMINESCENCE; HOLE TRAPS; ION IMPLANTATION; PARTICLE BEAM INJECTION; RARE EARTH ELEMENTS; SILICON;

CHARGE TRAPPING; ELECTRON INJECTION; RARE EARTH OXIDES; RARE-EARTH (RE) IMPURITIES;

LIGHT EMITTING DIODES;

EID: 33750416478     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.07.014     Document Type: Article

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