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Applied Physics B: Lasers and Optics

Volumn 87, Issue 1, 2007, Pages 129-134

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

(10) Nazarov, A N a,b Osiyuk, I N a Sun, J M a Yankov, R A a Skorupa, W a Tyagulskii, I P b Lysenko, V S b Prucnal, S c Gebel, T d Rebohle, L d

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

c MARIA CURIE SK ODOWSKA UNIVERSITY (Poland)

d Nanoparc GmbH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CAPTURE; ELECTRON CHARGING; LIGHT-EMITTING SILICON DIODES; LUMINESCENCE CENTERS (LC);

CHARGE TRAPPING; COMPUTER SIMULATION; DATA ACQUISITION; ELECTROLUMINESCENCE; GERMANIUM; MOS DEVICES; QUENCHING; SILICON;

LIGHT EMITTING DIODES;

EID: 33947169382 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-006-2534-1 Document Type: Article

Times cited : (14)

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