Room-temperature photoluminescence from Tb ions implanted in SiO2 on Si

Journal of Applied Physics

Volumn 84, Issue 7, 1998, Pages 3867-3871

  Amekura, H ^a,b   Eckau, A ^a   Carius, R ^a   Buchal, Ch ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001365396     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368591     Document Type: Article

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