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Review of Scientific Instruments

Volumn 81, Issue 6, 2010, Pages

Localization and preparation of recombination-active extended defects for transmission electron microscopy analysis

(4) Falkenberg, M A a Schuhmann, H a Seibt, M a Radisch, V a

a UNIVERSITY OF GÖTTINGEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; CAST MULTICRYSTALLINE SILICON; CHEMICAL SENSITIVITY; DEFECT COMPLEX; ELECTRON-BEAM-INDUCED CURRENT; EXTENDED DEFECT; IN-SITU; LOCALIZATION ACCURACY; LOW DENSITY; LOW ENERGIES; TEM; TRANSMISSION ELECTRON; X-RAY TECHNIQUES;

DEFECT DENSITY; DEFECTS; ELECTRON BEAMS; POLYSILICON; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC CURRENTS;

EID: 77954189812 PISSN: 00346748 EISSN: None Source Type: Journal
DOI: 10.1063/1.3443573 Document Type: Article

Times cited : (14)

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