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Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar + implanted 3C-SiC (001)

(8) Tschumak, E a Granzner, R b Lindner, J K N a Schwierz, F b Lischka, K a Nagasawa, H c Abe, M c As, D J a

a UNIVERSITY OF PADERBORN (Germany)

b ILMENAU UNIVERSITY OF TECHNOLOGY (Germany)

c HOYA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROJUNCTION; ATLAS SIMULATIONS; CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRON CHANNEL; FIELD EFFECTS; NON-POLAR; OUTPUT CHARACTERISTICS; POSITIVE BIAS VOLTAGES; ROOM TEMPERATURE;

CRYSTAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954138931 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3455066 Document Type: Article

Times cited : (27)

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