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Volumn 95, Issue 8, 2009, Pages

Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

(10) Chang, C Y a Wang, Yu Lin a Gila, B P a Gerger, A P a Pearton, S J a Lo, C F a Ren, F a Sun, Q b Zhang, Yu b Han, J b

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

b Yale University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ALGAN; ALGAN/GAN; DC CHARACTERISTICS; DRAIN-SOURCE CURRENTS; GATE CURRENT; GATE DEVICES; GATE FINGERS; IN-PLANE; METAL OXIDE SEMICONDUCTOR; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOS GATES; NON-POLAR; PLANE SAPPHIRE;

CORUNDUM; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRON MOBILITY; EPITAXIAL LAYERS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS;

SEMICONDUCTING SILICON;

EID: 69549122519 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3216576 Document Type: Article

Times cited : (12)

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