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Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 367-369

Insulating substrates for cubic GaN-based HFETs

(4) Tschumak, E a de Godoy, M P F a As, D J a Lischka, K a

a UNIVERSITY OF PADERBORN (Germany)

Author keywords

3C SiC; GaN

Indexed keywords

BUFFER LAYERS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL LAYERS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GROWTH (MATERIALS); INSULATION; NITRIDES; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SUBSTRATES; SURFACE ROUGHNESS; TRANSISTORS; ZINC;

3C-SIC; CURRENT VOLTAGE (I V) CHARACTERISTICS; DISLOCATION DENSITIES; GAN; GAN BUFFER LAYERS; HETERO JUNCTION; HIGH RESISTANCE; III-NITRIDES; INSULATING SUBSTRATES; INSULATION LAYERS; NON-LINEAR; POLARIZATION EFFECTS; SI(0 0 1); SILICON (111) SUBSTRATES; SURFACE LAYERING;

GALLIUM ALLOYS;

EID: 58749102764 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2008.07.069 Document Type: Article

Times cited : (7)

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