C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1836-1841

  Choi, Y C ^a   Shi, J ^a   Pophristic, M ^b   Spencer, M G ^a   Eastman, L F ^a  

^a Cornell University   (United States)

^b Velox Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE FEEDING REGION;

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; SAPPHIRE; SUBSTRATES;

FIELD EFFECT TRANSISTORS;

EID: 37149024132     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2794058     Document Type: Article

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