Normally-off AlGaN/GaN HEMTs with Thin InGaN cap layer

IEICE Transactions on Electronics

Volumn E91-C, Issue 7, 2008, Pages 989-993

  Ito, Masafumi ^a   Kishimoto, Shigeru ^a   Nakamura, Fumihiko ^b   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b POWDEC K K   (Japan)

Author keywords

AlGaN GaN; HEMT; InGaN cap; Normally off

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ETCHING; GALLIUM NITRIDE; TRANSCONDUCTANCE;

ALGAN/GAN; ALGAN/GAN HEMTS; GAN CAP LAYERS; INGAN CAP; MAXIMUM TRANSCONDUCTANCE; NORMALLY OFF; OHMIC ELECTRODES; SOURCE RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77953519407     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.7.989     Document Type: Article

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