Schottky and ohmic contacts on non-polar cubic GaN epilayers

Materials Research Society Symposium Proceedings

Volumn 1108, Issue , 2009, Pages 3-8

  As, D J ^a   Tschumak, E ^a   Laubenstein, I ^a   Kemper, R M ^a   Lischka, K ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CAPACITY-VOLTAGE CHARACTERISTICS; CONTACT LITHOGRAPHY; CURRENT VOLTAGE; EXPERIMENTAL DATA; EXPONENTIAL INCREASE; GAN EPILAYERS; IN-DEPTH ANALYSIS; IV CHARACTERISTICS; METAL SEMICONDUCTOR INTERFACE; METALLIZATIONS; NON-POLAR; PD CONTACTS; RECTIFYING BEHAVIORS; REVERSE BIAS; REVERSE CHARACTERISTICS; REVERSE CURRENTS; REVERSE VOLTAGES; ROOM TEMPERATURE; SCHOTTKY; SCHOTTKY-BARRIER DEVICES; THERMAL-ANNEALING; THERMIONIC EMISSION THEORY; THIN SURFACE BARRIERS; THREE ORDERS OF MAGNITUDE; TRANSMISSION-LINE MEASUREMENTS;

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); DISTILLATION; ELECTRIC CONTACTORS; EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NICKEL; OHMIC CONTACTS; PALLADIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILVER; SURFACE DEFECTS; THERMAL EVAPORATION; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70349267621     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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