Cubic GaN/AlGaN HEMTs on 3C-SiC substrate for normally-off operation

IEICE Transactions on Electronics

Volumn E89-C, Issue 7, 2006, Pages 1057-1063

  Abe, Masayuki ^a   Nagasawa, Hiroyuki ^a   Potthast, Stefan ^b   Fernandez, Jara ^b   Schörmann, Jörg ^b   As, Donat Josef ^b   Lischka, Klaus ^b  

^a HOYA Advanced Semiconductor Technologies Co Ltd   (Japan)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Blocking voltage; Cubic GaN; GaN AlGaN HEMT; Piezo; Polarization; Spontaneous

Indexed keywords

CRYSTAL GROWTH; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; HETEROJUNCTIONS; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

BLOCKING VOLTAGE; CUBIC GAN; GAN/ALGAN HEMT; SCHOTTKY DIODE TEST VEHICLE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33748308915     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.7.1057     Document Type: Conference Paper

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