Experimental study of uniaxial-stress effects on DC characteristics of nMOSFETs

IEEE Transactions on Components and Packaging Technologies

Volumn 33, Issue 2, 2010, Pages 278-286

  Koganemaru, Masaaki ^a   Ikeda, Toru ^b   Miyazaki, Noriyuki ^b   Tomokage, Hajime ^c  

^a FUKUOKA INDUSTRIAL TECHNOLOGY CENTER   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c FUKUOKA UNIVERSITY   (Japan)

Author keywords

Deformation potential; Electron mobility; N type metal oxide semiconductor field effect transistors (nMOSFETs); Parasitic resistance; Residual stress

Indexed keywords

4-POINT BENDING; [110] DIRECTION; DC CHARACTERISTICS; DEFORMATION POTENTIAL; DIRECT CURRENT CHARACTERISTICS; EXPERIMENTAL STUDIES; GATE-LENGTH; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; MOBILITY MODEL; NMOSFET; NMOSFETS; PARASITIC RESISTANCES; STRESS EFFECTS; STRESS SENSITIVITY; STRESS-INDUCED; UNIAXIAL STRESS;

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; ELECTRONS; METALLIC COMPOUNDS; MODELS; MOS DEVICES; MOSFET DEVICES; RESIDUAL STRESSES; SHEAR DEFORMATION; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 77953479112     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2010.2045378     Document Type: Article

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