On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 11-12, 2010, Pages 2051-2055

  Bailey, M J ^a   Jeynes, C ^a   Sealy, B J ^a   Webb, R P ^a   Gwilliam, R M ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Blistering; ERDA; Exfoliation; Hydrogen; Ion cut; SIMS; Smart cut

Indexed keywords

ELASTIC RECOIL DETECTION ANALYSIS; FLUENCES; GAAS; H-CONTENT; HYDROGEN IONS; ION-CUT PROCESS; NON DESTRUCTIVE; SMART-CUT; SPUTTER RATE;

DEPTH PROFILING; GALLIUM ALLOYS; GALLIUM ARSENIDE; ION IMPLANTATION; SECONDARY EMISSION; SEMICONDUCTING GALLIUM; SPECTROMETRY;

SECONDARY ION MASS SPECTROMETRY;

EID: 77953325744     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.02.033     Document Type: Article

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