Analytical modeling of current collapse in AlGaN/GaN HFETs according to the virtual gate concept

IEEE Transactions on Device and Materials Reliability

Volumn 10, Issue 2, 2010, Pages 287-294

  Moradi, Maziar ^a   Valizadeh, Pouya ^a  

^a Dept of Electrical and Computer Engineering   (Canada)

Author keywords

Analytical modeling; Current collapse; GaN; Heterostructure field effect transistor (HFET); Surface traps

Indexed keywords

ALGAN/GAN HFETS; ANALYTICAL MODEL; ANALYTICAL MODELING; CURRENT COLLAPSE; CURRENT LEVELS; DEGREE OF COMPLEXITY; DOMINANT FACTOR; EXPERIMENTAL OBSERVATION; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HIGH OUTPUT POWER; HIGH-POWER DEVICES; HIGH-POWER MICROWAVE APPLICATIONS; HIGH-POWER OPERATION; SURFACE STATE; SURFACE TRAP; VIRTUAL GATE;

CHARGE TRAPPING; COMPUTER SIMULATION; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRON MULTIPLIERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; MODELS;

FIELD EFFECT TRANSISTORS;

EID: 77953253650     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2010.2046739     Document Type: Article

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