Will the velocity of GaN HEMTs ever overshoot?

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 191-

  Wu, Yifeng ^a   Brar, Bobby ^b   Eastman, Lester ^b   Singh, Jasprit ^b   Matulionis, Arvydas ^b   Trew, Bob ^c   Mishra, Umesh ^d   Adesida, Ilesanmi ^b  

^a Cree Santa Barbara Technology Center   (United States)

^b RSC Applications and Vision ^*

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUT-OFF FREQUENCY; DIAMOND DEVICES; ELECTRON VELOCITY; POWER DENSITY;

CAPACITANCE; DIAMONDS; ELECTRIC CURRENTS; GALLIUM NITRIDE; MILLIMETER WAVES; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 18044376993     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)