Transport and gas sensing properties of In2O3 nanocrystalline thick films: A Hall effect based approach

Sensors and Actuators, B: Chemical

Volumn 139, Issue 2, 2009, Pages 322-328

  Oprea, A ^a   Gurlo, A ^b   Barsan N ^a   Weimar, U ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Gas sensitivity; In2O3; Mobility

Indexed keywords

CONCENTRATION LEVELS; CRYSTALLINE STRUCTURE; ELEVATED TEMPERATURE; FOUR-POINT; GAS SENSING PROPERTIES; GAS SENSITIVITY; GAS SENSORS; HALL EFFECT MEASUREMENT; HIGH SENSITIVITY; IN2O3; MICROSCOPIC PARAMETER; MOBILITY; N-TYPE CONDUCTION; NANO-SIZED; NANOCRYSTALLINE; OPERATING CONDITION; OZONE EXPOSURES; POLYMORPHIC FORMS; THE STANDARD MODEL;

CARRIER CONCENTRATION; GAS DETECTORS; GASES; GYRATORS; HALL EFFECT; MAGNETIC FIELD EFFECTS; OZONE; SENSORS; SINGLE CRYSTALS; THICK FILMS;

CARRIER MOBILITY;

EID: 67349176631     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.03.002     Document Type: Article

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