The same etchant produces both near-atomically flat and microfaceted Si(100) surfaces: The effects of gas evolution on etch morphology

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

  Aldinger, Brandon S ^a   Gupta, Ankush ^a   Clark, Ian T ^a   Hines, Melissa A ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS AMMONIUM; AREAL DENSITIES; ATOMIC SCALE; ATOMICALLY FLAT SURFACE; ETCH MORPHOLOGY; ETCH PITS; ETCHED SURFACE; ETCHING REACTION; GAS EVOLUTION; HIGH DENSITY; LENGTH SCALE; MICROFACETS; MICROPITS; MORPHOLOGICAL FEATURES; NON-CONTACT; PHYSICAL MEANS; SI(100) SURFACE; SILICON SURFACES; SURFACE-ROUGHENING;

AMMONIUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; COALESCENCE; ETCHING; OPTICAL MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON;

SURFACE CHEMISTRY;

EID: 77953014489     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3402580     Document Type: Article

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