Morphological and electrical characterization of etched Si wafers

Journal of the Electrochemical Society

Volumn 151, Issue 9, 2004, Pages

  Palermo, V ^a   Susi, E ^a   Jones, D ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANISOTROPY; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; ELECTROCHEMISTRY; ETCHING; HYDROGENATION; MORPHOLOGY; PASSIVATION; PH EFFECTS; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; SHIELDING; SURFACE ROUGHNESS;

ANISOTROPIC ETCHING; DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS); DIFFUSION-LIMITED AGGREGATION (DLA); LEAKAGE SPOTS;

SILICON WAFERS;

EID: 5044237469     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1774188     Document Type: Article

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