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Physical Review Letters

Volumn 104, Issue 9, 2010, Pages

Measurement of the spin relaxation time of single electrons in a silicon metal-oxide-semiconductor-based quantum dot

(3) Xiao, M a House, M G a Jiang, H W a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT DETECTION; ELECTRON SPIN STATE; EXCITED STATE SPECTROSCOPY; METAL OXIDE SEMICONDUCTOR; NUMBER OF ELECTRONS; PUMP-AND-PROBE; QUANTUM DOT; QUANTUM DOTS; SENSING TECHNIQUES; SINGLE ELECTRON; SINGLE SPIN; SPIN RELAXATION TIME; TIME DOMAIN;

DIELECTRIC DEVICES; ELECTRONS; EXCITED STATES; MAGNETIC FIELDS; OPTICAL WAVEGUIDES; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SPIN DYNAMICS; TIME DOMAIN ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77649223929 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.104.096801 Document Type: Article

Times cited : (140)

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