Static and dynamic TCAD analysis of IMOS performance: From the single device to the circuit

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1852-1857

  Mayer, Frédéric ^a   Le Royer, Cyrille ^a   Le Carval, Gilles ^a   Clavelier, Laurent ^a   Deleonibus, Simon ^a  

^a CEA GRENOBLE   (France)

Author keywords

Impact ionization MOSFET (IMOS); Influence of geometrical parameters; Inverter; Ring oscillator; Si film thickness; Silicon on insulator (SOI); Subthreshold slope

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); IMPACT IONIZATION; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

GEOMETRICAL PARAMETERS; IMPACT IONIZATION MOSFET (IMOS); RING OSCILLATOR; SUBTHRESHOLD SLOPE;

MOS DEVICES;

EID: 33746589939     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.877372     Document Type: Article

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