Analytical and compact modelling of the I-MOS (Impact Ionization MOS)

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 291-294

  Mayer, F ^a   Poiroux, T ^a   Le Carval, G ^a   Clavelier, L ^a   Deleonibus, S ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; ELECTRIC INVERTERS; IMPACT IONIZATION;

ANALYTICAL MODELS; COMPACT MODELING;

MOS CAPACITORS;

EID: 39549107107     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430935     Document Type: Conference Paper

References (10)

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4. E. Ton et al, "A Novel CMOS Compatible L-Shaped Impact-Ionization MOS (LI-MOS) Transistor", IEDM 2005, p. 971-974.
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10. O.A.M. Hurkx et al, "A New Analytical Diode Model Including Tunneling and Avalanche Breakdown",IEEE TED, Vol. 39, Issue 9, p 2090-2098, September 1992