Programming characteristics of the steep turn-on/off feedback FET (FBFET)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 176-177

  Chun, Wing Yeung ^a   Padilla, Alvaro ^a   Liu, Tsu Jae King ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CHANGE; EXPERIMENTAL DATA; FOWLER-NORDHEIM; GATE VOLTAGES; ORDERS-OF-MAGNITUDE;

FIELD EFFECT TRANSISTORS;

MESFET DEVICES;

EID: 71049141790     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. K. Gopalakrishnan et al., IEDM Tech. Dig. p. 289 (2002).
2. C. Hu et al., VLSI-TSA, p.14, (2008).
3. A. Padilla et al., IEDM Tech. Dig. p.171 (2008)
4. J. E. Brewer et al., Nonvolatile Memory Technologies with Emphasis on Flash, John wiley & Sons (2008)
5. X. Huang et al., IEDM, Tech. Dig. p. 67 (1999)