Vertical tunnel field-effect transistor with bandgap modulation and workfunction engineering

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 241-244

  Bhuwalka, Krishna K ^a   Schulze, Jörg ^a   Eisele, Ignaz ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; ENERGY GAP; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE; TUNNEL JUNCTIONS;

BANDGAP MODULATION; GATE BIAS; VERTICAL TUNNEL FIELD EFFECT TRANSISTORS; WORKFUNCTION ENGINEERING;

FIELD EFFECT TRANSISTORS;

EID: 17644379098     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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