GaN nanowires with Au + Ga solid solution grown on an Si(111) substrate by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 48, Issue 9 Part 1, 2009, Pages 0910011-0910014

  Jang, Eun Su ^a   Ra, Yong Ho ^a   Lee, Young Min ^a   Yun, Seok Hyo ^a   Kim, Dong Wook ^a   Navamathavan, R ^a   Kim, Jin Soo ^a   Lee, In Hwan ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE LENGTH; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; GOLD-COATED; GROWTH CONDITIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL CHARACTERIZATION; OPTIMUM GROWTH TEMPERATURE; SI(111) SUBSTRATE;

FIELD EMISSION; FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; GOLD COATINGS; GOLD DEPOSITS; GROWTH TEMPERATURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; SCANNING ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 77952725658     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.091001     Document Type: Article

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