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Journal of Materials Chemistry

Volumn 20, Issue 21, 2010, Pages 4404-4408

High-performance non-volatile CdS nanobelt-based floating nanodot gate memory

(7) Wu, P C a Dai, Y a Ye, Y a Fang, X L a Sun, T a Liu, C a Dai, L a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CDS; CDS NANOBELTS; HIGH-DENSITY; IN-BETWEEN; MEMORY WINDOW; NANODOTS; NON-VOLATILE; OPERATION VOLTAGE; OXIDE LAYER; RETENTION TIME; THERMAL EVAPORATION METHOD; TOP-GATE; WORKING PRINCIPLES;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; NANOBELTS; NANOSTRUCTURED MATERIALS; THERMAL EVAPORATION; TUNNELING (EXCAVATION);

DATA STORAGE EQUIPMENT;

EID: 77952518600 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c000541j Document Type: Article

Times cited : (14)

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