Multi-valued analogue information storage using self-assembled nanoparticle films

Nanotechnology

Volumn 16, Issue 8, 2005, Pages 1196-1203

  Suganuma, Yoshinori ^a   Trudeau, Paul Emil ^a   Dhirani, Al Amin ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; DIGITAL COMPUTERS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; INFORMATION ANALYSIS; REDUCTION; SELF ASSEMBLY; TRANSMISSION ELECTRON MICROSCOPY;

BINARY STATES; GATE VOLTAGES; NANOPARTICLE FILMS; SINGLE-ELECTRON TRANSISTORS (SET);

NANOSTRUCTURED MATERIALS;

EID: 21244449237     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/8/037     Document Type: Article

References (37)

1. Sze S M 1969 Physics of Semiconductor Device (New York: Wiley)
2. Zeller H R and Giaever I 1969 Phys. Rev. 181 789
3. Likharev K K 1999 Proc. IEEE 87 606
4. Tucker J R 1992 J. Appl. Phys. 72 4399
5. Lambe J and Jaklevic R C 1969 Phys. Rev. Lett. 22 1371
6. Adkins C J, Benjamin J D, Thomas J M D, Gardner J W and McGeown A J 1984 J. Phys. C: Solid State Phys. 17 4633
7. Cavicchi R E and Silsbee R H 1988 Phys. Rev. B 38 6407
8. Andres R P, Bein T, Dorogi M, Feng S, Henderson J I, Kubiak C P, Mahoney W, Osifchin R G and Reifenberger R 1996 Science 272 1323
9. Klein D L, Roth R, Lim A K L, Alivisatos A P and McEuen P L 1997 Nature 389 699
10. Sato T and Ahmed H 1997 Appl. Phys. Lett. 70 2759
11. Persson S H M, Olofsson L and Gunnarsson L 1999 Appl. Phys. Lett. 74 2546
12. Chen S, Ingram R S, Hostetler M J, Pietron J J, Murray R W, Schaaff T G, Khoury J T, Alvarez M M and Whetten R L 1998 Science 280 2098
13. Brust M, Bethell D, Kiely C J and Schiffrin D J 1998 Langmuir 14 5425
14. Nirmal M and Brus L E 1999 Acc. Chem. Res. 32 407
15. Murray C B, Kagan C R and Bawendi M G 2000 Annu. Rev. Mater. Sci. 30 545
16. Shim M and Guyot-Sionnest P 2000 Nature 407 981
17. Middleton A A and Wingreen N S 1993 Phys. Rev. Lett. 71 3198
18. Andres R P, Bielefeld J D, Henderson J I, Janes D B, Kolagunta V R, Kubiak C P, Mahoney W J and Osifchin R G 1996 Science 273 1690
19. Collier C P, Saykally R J, Shiang J J, Henrichs S E and Heath J R 1997 Science 277 1978
20. Black C T, Murray C B, Sandstrom R L and Sun S 2000 Science 290 1131
21. Musick M D, Keating C D, Lyon L A, Botsko S L, Pẽa D J, Holliway W D, McEvoy T D, Richardson J N and Natan M J 2000 Chem. Mater. 12 2869
22. Fishelson N, Shkrob I, Lev O, Gun J and Modestov A D 2001 Langmuir 17 403
23. Doty R C, Yu H, Shih C K and Korgel B A 2001 J. Phys. Chem. B 105 8291
24. Chandrasekharan N and Kamat P V 2001 Nano Lett. 1 67
25. Trudeau P-E, Orozco A, Kwan E and Dhirani A-A 2002 J. Chem. Phys. 117 3978
26. Müller K-H, Herrmann J, Raguse B, Baxter G and Reda T 2002 Phys. Rev. B 66 075417
27. Trudeau P-E, Escorcia A and Dhirani A-A 2003 J. Chem. Phys. 119 5267
28. Wessels J M, Nothofer H-G, Ford W E, Wrochem F, Scholz F, Vossmeyer T, Schroedter A, Weller H and Yasuda A 2004 J. Am. Chem. Soc. 126 3349
29. Pekola J P, Hirvi K P, Kauppinen J P and Paalanen M A 1994 Phys. Rev. Lett. 73 2903
30. Jaeger R C 1988 Introduction to Microelectronic Fabrication (New York: Addison-Wesley)
31. Zabet-Khosousi A, Suganuma Y, Lopeta K, Trudeau P-E and Dhirani A-A 2005 Phys. Rev. Lett. 94 096801
32. Delsing P, Likharev K K, Kuzmin L S and Claeson T 1989 Phys. Rev. Lett. 63 1180
33. Chen W, Ahmed H and Nakazoto K 1995 Appl. Phys. Lett. 66 3383
34. Furlan M, Heinzel T, Jeanneret B and Lotkhov S V 2000 J. Low Temp. Phys. 118 297
35. Berven C A, Wybourne M N, Clarke L, Longstreth L, Hutchison J E and Mooster J L 2002 J. Appl. Phys. 92 4513
36. Rogge S, Salvino D J, Tigner B and Osheroff D D 1994 Physica B 194-196 407
37. Morgan N Y, Leatherdale C A, Drndić M, Jarosz M V, Kastner M A and Bawendi M 2002 Phys. Rev. B 66 075339