Multilevel storage in N-doped Sb2Te3-based lateral phase change memory with an additional top TiN layer

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Yin, You ^a   Ota, Kazuhiro ^a   Noguchi, Tomoyuki ^a   Ohno, Hiroki ^a   Sone, Hayato ^a   Hosaka, Sumio ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; INTERMEDIATE LEVEL; LATERAL ELECTRODES; MULTILEVEL STORAGE; N-DOPED; TIN LAYERS; TOP HEATER;

ELECTRODES; PULSE CODE MODULATION; TELLURIUM COMPOUNDS; TITANIUM NITRIDE;

PHASE CHANGE MEMORY;

EID: 77952467584     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C063     Document Type: Article

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