Dependences of electrical properties of thin GeSbTe and AgInSbTe films on annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 8, 2005, Pages 6208-6212

  Yin, You ^a   Sone, Hayato ^a   Hosaka, Sumio ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

AgInSbTe; Chalcogenide; Electrical properties and annealing; Ge2Sb 2Te5; Phase change; Transistor memory; X ray diffraction

Indexed keywords

ANNEALING; DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILVER COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

CHALCOGENIDE; NONVOLATILE LATERAL TRANSISTOR MEMORY DEVICES; PHASE CHANGE;

THIN FILMS;

EID: 31544439111     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6208     Document Type: Article

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