Prototype of phase-change channel transistor for both nonvolatile memory and current control

IEEE Transactions on Electron Devices

Volumn 54, Issue 3, 2007, Pages 517-523

  Hosaka, Sumio ^a   Miyauchi, Kunihiro ^a,b   Tamura, Takuro ^a   Yin, You ^a   Sone, Hayato ^a  

^a GUNMA UNIVERSITY   (Japan)

^b RICOH COMPANY LTD   (Japan)

Author keywords

Annealing; Channel current control; GeSbTe; Melting; Nonvolatile memory; One transistor cell; Phase change (PC)

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; ELECTRIC CURRENT CONTROL; JOULE HEATING; NONVOLATILE STORAGE; PHASE CHANGE MATERIALS; SEMICONDUCTING GERMANIUM COMPOUNDS; THIN FILMS;

CHANNEL CURRENT CONTROL; CHANNEL TRANSISTOR; NONVOLATILE MEMORY; PROTOTYPE;

TRANSISTORS;

EID: 33947637912     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.890386     Document Type: Article

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