Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals

Applied Physics Letters

Volumn 96, Issue 17, 2010, Pages

  Suwa, T ^a   Teramoto, A ^a   Kumagai, Y ^a   Abe, K ^a   Li, X ^a   Nakao, Y ^a   Yamamoto, M ^b   Kato, Y ^c   Muro, T ^c   Kinoshita, T ^c   Ohmi, T ^a   Hattori, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Stella Chemifa Corporation   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED PHOTOELECTRON SPECTRA; CORE LEVELS; CRYSTALLOGRAPHIC ORIENTATIONS; OXYGEN RADICAL; SI (1 1 1); SI(1 0 0); SI(110); VALENCE BAND OFFSETS;

HETEROJUNCTIONS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; SILICON COMPOUNDS; VALENCE BANDS;

SILICON;

EID: 77952416808     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3407515     Document Type: Article

References (22)

1. T. Ueno, A. Morioka, S. Chikamura, and Y. Iwasaki, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 39, L327 (2000). 10.1143/JJAP.39.L327
2. K. Sekine, Y. Saito, M. Hirayama, and T. Ohmi, IEEE Trans. Electron Devices IETDAI 0018-9383 48, 1550 (2001). 10.1109/16.936559 (Pubitemid 32732728)
3. K. Takahashi, H. Nohira, T. Nakamura, T. Ohmi, and T. Hattori, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 40, L68 (2001). 10.1143/JJAP.40.L68
4. M. Goto, K. Azuma, T. Okamoto, and Y. Nakata, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 42, 7033 (2003). 10.1143/JJAP.42.7033
5. M. Shioji, T. Shiraishi, K. Takahashi, H. Nohira, K. Azuma, Y. Nakata, Y. Takata, S. Shin, K. Kobayashi, and T. Hattori, Appl. Phys. Lett. APPLAB 0003-6951 84, 3756 (2004). 10.1063/1.1737793
6. R. Kuroda, T. Suwa, A. Teramoto, R. Hasebe, S. Sugawa, and T. Ohmi, IEEE Trans. Electron Devices IETDAI 0018-9383 56, 291 (2009). 10.1109/TED.2008. 2010591
7. G. Lucovsky, Y. Ma, T. Yasuda, C. Silvestre, and J. Hauser, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 31, 4387 (1992). 10.1143/JJAP.31.4387
8. T. Fuyuki, S. Muranaka, and H. Matsunami, Appl. Surf. Sci. ASUSEE 0169-4332 117-118, 123 (1997). 10.1016/S0169-4332(97)80064-5
9. H. Itoh, N. Nagamine, H. Satake, and A. Toriumi, Microelectron. Eng. MIENEF 0167-9317 48, 71 (1999). 10.1016/S0167-9317(99)00341-X (Pubitemid 30502745)
10. A. Kurokawa, K. Nakamura, S. Ichimura, and D. W. Moon, Appl. Phys. Lett. APPLAB 0003-6951 76, 493 (2000). 10.1063/1.125798
11. K. Nakajima, M. Suzuki, K. Kimura, M. Yamamoto, A. Teramoto, T. Ohmi, and T. Hattori, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 45, 2467 (2006). 10.1143/JJAP.45.2467
12. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. SIANDQ 0142-2421 20, 77 (1993). 10.1002/sia.740200112
13. T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, and T. Hattori, J. Appl. Phys. JAPIAU 0021-8979 104, 114112 (2008). 10.1063/1.3002418
14. T. Ohmi, J. Electrochem. Soc. JESOAN 0013-4651 143, 2957 (1996). 10.1149/1.1837133
15. K. Ohishi and T. Hattori, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 33, L675 (1994). 10.1143/JJAP.33.L675
16. F. J. Himpsel, F. R. McFeely, A. T. Ibrashimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B PRBMDO 0163-1829 38, 6084 (1988). 10.1103/PhysRevB.38. 6084
17. O. V. Yazyev and A. Pasquarello, Phys. Rev. Lett. PRLTAO 0031-9007 96, 157601 (2006). 10.1103/PhysRevLett.96.157601
18. K. Yamamoto and M. Hasegawa, J. Vac. Sci. Technol. B JVTBD9 1071-1023 12, 2493 (1994). 10.1116/1.587790
19. G. Hollinger and F. J. Himpsel, Appl. Phys. Lett. APPLAB 0003-6951 44, 93 (1984). 10.1063/1.94565 (Pubitemid 14589527)
20. M. F. Hochella, Jr. and A. H. Carim, Surf. Sci. SUSCAS 0039-6028 197, L260 (1988). 10.1016/0039-6028(88)90625-5
21. E. Paparazzo, M. Fanfoni, and E. Severini, Appl. Surf. Sci. ASUSEE 0169-4332 56-58, 866 (1992). 10.1016/0169-4332(92)90352-X
22. K. Hirose, K. Sakano, H. Nohira, and T. Hattori, Phys. Rev. B PRBMDO 0163-1829 64, 155325 (2001). 10.1103/PhysRevB.64.155325