Angle-resolved photoelectron study on the structures of silicon nitride films and Si3 N4 /Si interfaces formed using nitrogen-hydrogen radicals

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Aratani, Takashi ^a   Higuchi, Masaaki ^a,e   Sugawa, Shigetoshi ^a   Ikenaga, Eiji ^b   Ushio, Jiro ^c   Nohira, Hiroshi ^d   Suwa, Tomoyuki ^a   Teramoto, Akinobu ^a   Ohmi, Tadahiro ^a   Hattori, Takeo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JASRI/Spring 8 ^*  (Japan)

^c HITACHI LTD   (Japan)

^d TOKYO CITY UNIVERSITY   (Japan)

^e TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; HYDROGEN; NITRIDES; NONMETALS; SILICON; SILICON NITRIDE; SYNCHROTRON RADIATION; X RAY LITHOGRAPHY;

AREAL DENSITIES; H BONDS; HYDROGEN RADICALS; INTERFACE STRUCTURES; NITRIDE FILMS; PHOTOELECTRON STUDIES; SI ATOMS; SI(100); SI(110); SI(111);

CRYSTAL ATOMIC STRUCTURE;

EID: 58149259989     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3002418     Document Type: Article

References (27)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 10.1063/1.1361065 89, 5243 (2001).
2. K. Sekine, Y. Saito, M. Hirayama, and T. Ohmi, IEEE Trans. Electron Devices 0018-9383 10.1109/16.848279 47, 1370 (2000).
3. H. Shimada, I. Ohshima, S. Nakao, M. Nakagawa, K. Kanemoto, M. Hirayama, S. Sugawa, and T. Ohmi, Symp. on VLSI Technology, p. 67 (2001).
4. T. Ito, S. Hijiya, T. Nozaki, H. Arakawa, M. Shinoda, and Y. Fukukawa, J. Electrochem. Soc. 0013-4651 10.1149/1.2131471 125, 448 (1978).
5. Y. Hayafuji and K. Kajiwara, J. Electrochem. Soc. 0013-4651 10.1149/1.2124388 129, 2102 (1982).
6. C. Maillot, H. Roulet, G. Dufour, F. Rochet, and S. Rigo, Appl. Surf. Sci. 0169-4332 10.1016/0169-4332(86)90073-5 26, 326 (1986).
7. C. H. F. Peden, J. W. Rogers, Jr., N. D. Shinn, K. B. Kidd, and K. L. Tsang, Phys. Rev. B 0163-1829 10.1103/PhysRevB.47.15622 47, 15622 (1993).
8. M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Maruizumi, A. Teramoto, T. Ohmi, and T. Hattori, Appl. Phys. Lett. 0003-6951 10.1063/1.2715037 90, 123114 (2007).
9. S. Tanuma, S. C. J. Powell, and D. R. Penn, Surf. Interface Anal. 0142-2421 10.1002/sia.740200112 20, 77 (1993).
10. Y. Morita and H. Tokumoto, Appl. Surf. Sci. 0169-4332 100-101, 440 (1996).
11. T. Ohmi, J. Electrochem. Soc. 0013-4651 10.1149/1.1837133 143, 2957 (1996).
12. M. Hirayama and T. Ohmi, Proceedings of the 1997 Joint International Meeting, Paris, August-September 1997 (unpublished), Vols. 97, pp. 1802-1803.
13. S. Carniato, J. -J. Gallet, F. Rochet, G. Dufour, F. Boumel, S. Rangan, A. Verdini, and L. Floreano, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76.085321 76, 085321 (2007).
14. J. Ushio, T. Maruizumi, and K. Kushida-Abdelghafar, Appl. Phys. Lett. 0003-6951 10.1063/1.1504872 81, 1818 (2002).
15. H. Nohira, N. Tamura, J. Ushio, and T. Hattori, Proc.-Electrochem. Soc. 2005, 19 (2005).
16. K. Ohishi and T. Hattori, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.33.L675 33, L675 (1994).
17. F. J. Himpsel, F. R. McFeely, A. Talev-Ibrashimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.38.6084 38, 6084 (1988).
18. K. Takahashi, K. Hirose, H. Nohira, and T. Hattori, Appl. Phys. Lett. 0003-6951 10.1063/1.1616204 83, 3422 (2003).
19. G. -M. Rignanese and A. Pasquarello, Phys. Rev. B 0163-1829 10.1103/PhysRevB.63.075307 63, 075307 (2001).
20. Th. Eickhoff, V. Medicherla, and W. Drube, J. Electron Spectrosc. Relat. Phenom. 137-140, 85 (2004).
21. O. V. Yazyev and A. Pasquarello, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.96.157601 96, 157601 (2006).
22. S. Dreiner, M. Schürmann, C. Westphal, and H. Zacharias, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.86.4068 86, 4068 (2001); S. Dreiner, M. Schürmann, and C. Westphal, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 93.126101 93, 126101 (2004).
23. M. F. Hochella, Jr. and A. H. Carim, Surf. Sci. 0039-6028 10.1016/0039-6028(88)90625-5 197, L260 (1988).
24. A. Ogura, T. Yoshida, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, and T. Hattori, Appl. Surf. Sci. 254, 6229 (2008). 0169-4332
25. M. B. Trzhaskovskaya, V. I. Nefedov, and V. G. Yarzhemsky, At. Data Nucl. Data Tables 77, 97 (2001).
26. T. Hattori, H. Nohira, S. Shinagawa, M. Hori, M. Kase, and T. Maruizumi, Microelectron. Reliab. 0026-2714 10.1016/j.microrel.2006.03.003 47, 20 (2007).
27. Z. H. Lu, J. P. McCaffrey, B. Brar, G. D. Wilk, R. M. Wallance, and L. C. Feldman, Appl. Phys. Lett. 0003-6951 10.1063/1.120438 71, 2764 (1997).