Influence of interface structure on oxidation rate of silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 1 A/B, 2001, Pages

  Takahashi, Kensuke ^a   Nohira, Hiroshi ^a   Nakamura, Tomohiro ^a   Ohmi, Tadahiro ^b   Hattori, Takeo ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Atomic oxygen; Interface formation; Layer by layer oxidation; Oxidation rate; Oxidation reaction; SiO2 Si interface structure; X ray photoelectron spectroscopy

Indexed keywords

INTERFACES (MATERIALS); OXIDATION; REACTION KINETICS; SILICA; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE STRUCTURE;

SEMICONDUCTING SILICON;

EID: 0035862489     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l68     Document Type: Article

References (12)